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Fiber Optics
High Power BIDI(R) Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
SBH52444x-FSAN
Features * Designed for application in passive-optical networks according to FSAN, ITU-T G.983 * Suitable for ONU applications, 155 Mbit/s downstream bitrate * Integrated Wavelength Division Multiplexer (WDM) * Bi-Directional Transmission in 2nd and 3rd optical window * Single fiber solution * FP-Laser Diode with Multi-Quantum Well structure * Class 3B Laser Product * Suitable for bit rates up to 1.25 Gbit/s * Ternary Photodiode at rear mirror for monitoring and control of radiant power * Low noise / high bandwidth PIN diode * Hermetically sealed subcomponents, similar to TO 46 * With singlemode fiber pigtail
BIDI(R) is a registered trademark of Infineon Technologies
Data Sheet
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SBH52444x-FSAN
Pin Configuration Pin Configuration
Transmitter (bottom view)
2.54 mm 2 1 3 4
Pinning 2 (Standard)
1
2 LD 3 MD
4
Figure 1
Transmitter
Receiver with Preamp (bottom view)
2.54 mm 2 1 3 4
Pinning (Standard)
3 Out-
4 VCC Pin Preamp 2 1 Out+
Figure 2
Receiver with Preamp
Other Pinnings on request / different drawing set required for non standard pinning
Data Sheet
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SBH52444x-FSAN
Description Description The Infineon module for bidirectional optical transmission has been designed for different optical networks structures. In the last few years the structure has changed from point to point planned for Broad band ISDN to a point to multipoint passive optical network (PON) architecture for the optical network in the subscriber loop. A transceiver can be realized with discrete elements (Figure 3). Transmitter and receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength independent or WDM).
Transmitter Coupler Receiver 2:1 or 2:2 3 dB wavelength independent or wavelength division multiplexing
Figure 3
Realization with Discrete Elements
Infineon has realized this transceiver configuration in a compact module called a BIDI(R) (Figure 4). This module is especially suitable for separating the opposing signals at the ends of a link. It replaces a discrete solution with a transmitter, receiver and coupler. The basic devices are a laser diode and a photodiode, each in a TO package, plus the filter in the beam path. A lens in the TO laser concentrates the light and enables it to be launched into the single-mode fiber of the module. In the same way the light from the fiber is focused onto the small, light-sensitive area of the photodiode to produce a high photo current. The mirror for coupling out the received signal is arranged in the beam so that the transmitter and receiver are at right angles to each other. This means the greatest possible degree of freedom in the layout of the electric circuit.
Data Sheet
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SBH52444x-FSAN
Description
Beam Splitter
Glass Lens
TOLaser
Fiber
TO-Detector
Figure 4
Compact Realization of the Transceiver in One Module
A decisive advantage of the module is its use of standard TO components. These devices, produced in large quantities, are hermetically sealed and tested before they are built in. This makes a very substantial contribution to the excellent reliability of the module. The solid metal package of the module serves the same purpose. It allows the use of modern laser welding techniques for reliable fixing of the different elements and the fiber holder.
Data Sheet
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SBH52444x-FSAN
FSAN Applications FSAN Applications The generation of a service-independent platform providing a high transport capacity based on the existing infrastructure is the most important goal with respect to the standardization of new systems for the access network. For FSAN (Full Service Access Network) there have been several Working Groups working on a special system configuration. The target of FSAN was to make a specification for: * * * * Fiber To The Cabinet (FTTCab) Fiber To The Curb (FTTC) Fiber To The Building (FTTB) Fiber To The Home (FTTH).
The FSAN Basic Network Structure is shown below.
The Common Access System
Switch Node
PON Head End Node
Local Exchange
Cabinet
Curb
Home
OLT: Optical Line Termination ONU: Optical Network Unit ONT: Optical Network Termination ATM: Asynchron Transfer Mode SDH: Synchronous Digital Hierarchy NTE: Network Termination UNI: User Network Interface ADSL: Asymmetric Digital Subscriber Line VDSL: Very High Speed Digital Subscriber Line
SDH ATM ATM ATM ATM OLT OLT OLT OLT
PON
ONU ONU
ADSL VDSL
UNI NTE NTE NTE ONU ONT
VDSL
FTTEx FTTCab FTTC/FTTB FTTB/FTTH
ONU Passive Optical Network
Figure 5
FSAN Basic Network Structure
Data Sheet
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SBH52444x-FSAN
Technical Data Technical Data Absolute Maximum Ratings Parameter Module Operating temperature range at case Storage temperature range Soldering temperature (tmax = 10 s, 2 mm distance from bottom edge of case) Laser Diode Direct forward current Radiant power CW Reverse Voltage Monitor Diode Reverse Voltage Forward Current Receiver Diode Reverse Voltage Forward Current Optical power into the optical port Symbol Limit Values min. max. 85 85 260 C Unit
TC Tstg TS
-40 -40
IF max PF, rad VR VR IF VR IF Pport
120 4 2 10 2 10 2 3
mA mW V V mA V mA mW
Data Sheet
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SBH52444x-FSAN
Technical Data The electro-optical characteristics described in the following tables are only valid for use within the specified maximum ratings or under the recommended operating conditions. Transmitter Electro-Optical Characteristics Parameter Optical output power (maximum) Emission wavelength center of range, PF = 0.5 PF, max. Spectral width (RMS) Temperature coefficient of wavelength Threshold current (whole temperature range) Radiant power at Ith Slope efficiency (-40...85C) Symbol min. Limit Values typ. max. mW 1360 5.8 0.5 2 45 1.5 50 35 -30 150 30 8 100 270 200 500 nm/K mA V W mW/A % nm 2 1260 Unit
PF, max
ltrans sl
TC Ith
Forward voltage, PF = 0.5 PF, max. VF
Pth
h
Variation of 1st derivative of P/I Svar (0.1 to 2.0 mW) Differential series resistance Rise time (10%-90%) Fall time (10%-90%)
RS tr tf
W
ps
Monitor Diode Electro-Optical Characteristics Parameter Dark current, VR = 5 V, PF = 0, T = Tmax Photocurrent, VR = 5 V, PF = 0.5 PF, max Capacitance, VR = 5 V, f = 1 MHz Tracking error 1), VR = 5 V
1)
Symbol
Limit Values min. max. 500 100 -1 1000 10 1
Unit nA A pF dB
IR IP C5
TE
The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature range and relative to the reference point: Imon, ref = Imon (T = 25C, PF = 0.5 PF, max.). Thus, TE is given by: PF [ TC ] TE [ dB ] = 10 log -----------------------P F [ 25C ]
Data Sheet
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Technical Data Receiver Diode Electro-Optical Characteristics Parameter Spectral sensitivity, VR = 5 V, l = 1550 nm Rise and fall time (10%-90%) RL = 50 W, VR = 5 V Total capacitance Symbol Limit Values min. max. 1 0.5 1.5 50 A/W ns pF nA 0.65 Unit
Srec tr ; tf C ID
VR = 5 V, Popt = 0, f = 1 MHz Dark current, VR = 5 V, Popt = 0
Characteristics for Pin-Preamp-Receivers at TA = 25C, unless otherwise specified. Preamp Characteristics Parameter DC-Characteristics Supply Voltage Supply Current AC-Characteristics Optical Sensitivity (BER 10-10, PN7) Linear Bandwidth (-3 dB) Optical overload (average) Transimpedance (differential) Output resistance (differential) Noise current density Gain (differential) G 10 Symbol min. Limit Values typ. 5 25 -33 180 -8 16 40 -36 240 -5 20 50 3 16 24 24 60 max. 6 26 V mA dBm MHz dBm kW Unit
VCC ICC S
BW
4.5
Pmax RT Rout
W
pa/Hz mV/W
Data Sheet
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Technical Data Module Electro-Optical Characteristics Parameter Optical Crosstalk
1)
Symbol CRT RL
Limit Values min. max. -47 -6 -20
Unit dB
Backreflection (Return Loss) 1310 nm Backreflection (Return Loss) 1550 nm
1)
Optical Crosstalk is defined as I Det.0 CRT [ dB ] = 10 log ----------I Det.1 with: IDet,0: the photocurrent with PF = 0.5 PF, max., without optical input, CW laser operation, VR = 2 V and IDet,1: the photocurrent without PF, but 0.5 PF, max. optical input power, l = 1550 nm.
End of Life Time Characteristics Parameter Threshold current at T = Tmax Current above threshold, over full temperature range, at Imon, ref = Imon (T = 25C, PF = 0.5 PF, max., BOL) Tracking Error Detector Dark Current, VR = 2 V, T = Tmax Monitor Dark Current, VR = 2 V, T = Tmax Symbol Limit Values min. max. 60 7 70 mA Unit
Ith
DIF
TE
-1.5
1.5 400 1
dB nA A
IR IR
Data Sheet
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Fiber Data Fiber Data The mechanical fiber characteristics are described in the following table. Fiber Characteristics Parameter min. Mode Field Diameter Cladding Diameter Mode Field/Cladding Concentricity Error Cladding Non-circularity Mode Field Non-circularity Cut off Wavelength Jacket Diameter Bending Radius Tensile Strength Fiber Case Length 1250 0.8 30 5 0.8 1.2 N m 1 8 123 Limit Values typ. 9 125 max. 10 127 1 2 6 nm mm % m Unit
Data Sheet
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SBH52444x-FSAN
Eye Safety Eye Safety Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams. Especially do not look directly into the laser diode or the collimated laser beam when the diode is activated. Class 3B Laser Product According to IEC 60825-1
INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM Class 3B Laser Product
Figure 6
Required Labels
Class IIIb Laser Product According to FDA Regulations Complies with 21 CFR 1040.10 and 1040.11
LASER RADIATION - AVOID DIRECT EXPOSURE TO BEAM
SEMICONDUCTOR LASER INVISIBLE RADIATION CLASS IIIb LASER PRODUCT
Figure 7
Required Label
Laser Data Wavelength Maximum total output power Beam divergence (1/e )
2
1310 nm less than 50 mW 10
Data Sheet
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Package Outlines Package Outlines
Dimensions in mm
Figure 8
Connector Options Model SBH52444G-FSAN SBH52444N-FSAN SBH52444P-FSAN SBH52444Z-FSAN Other connectors on request Type SM FC/PC SM SC/PC 0 SM SC/APC 8 SM without connector
Data Sheet
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SBH52444x-FSAN Revision History: Previous Version: Page Subjects (major changes since last revision) Document's layout has been changed: 2002-Aug. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. 2002-05-28 DS0
Edition 2002-05-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany
(c) Infineon Technologies AG 2002.
All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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